2024.12----至今  厦门大学 物理科学与技术学院 物理学系 教授，博士生导师
2024.11    入选国家高层次青年人才计划
2024.10---2024.12  厦门大学 物理科学与技术学院 物理学系 副教授，博士生导师
2022.09---2024.10  美国加州大学圣巴巴拉分校，博士后
2020.03---2022.09  美国加州大学圣巴巴拉分校，材料学，博士
2018.09---2020.03  美国加州大学圣巴巴拉分校，电子与计算机工程，硕士
2012.08---2016.03  半导体所，研究实习员&扬州中科半导体照明中心，研发部副部长
2009.09---2012.07  中国科学院大学半导体研究所，电子与通信工程，硕士

1. J. M. Smith, P. Li,* R. Ley, M. S. Wong, M. J. Gordon, J.S. Speck, S. Nakamura, S. P. DenBaars, “High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1?μm” Appl. Phys. Lett. 125, 251107 (2024).
2. P. Li, J. Ewing, M.S Wong, Y. Yao, H. Li, S. Gandrothula, J.M Smith, M. Iza, J. Speak, S. Nakamura, S. P. DenBaars, “Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective.” APL Materials 12, 080901(2024).
3. P. Li, H. Li, Y. Yao, N. Li, M. Wong, M. Iza, M. Gordon, J. Speak, S. Nakamura, S. P. DenBaars, “Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%” ACS Photonics 10, 1899(2023).
4. P. Li, H. Li, Y. Yao, K.S. Qwah, M. Iza, J.S. Speck, S. Nakamura, S.P. DenBaars, “Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes,” Optics Express 31, 7572(2023).
5. P. Li, H. Zhang, H. Li, T. Cohen, R. Anderson1, M. S. Wong, E. Trageser, Y. Chow, M. D. Vries, S. Nakamura, S. P. DenBaars, “Demonstration of yellow (568nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells” Appl. Phys. Lett. 121, 071103(2022).
6. P. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Red InGaN micro-light-emitting diodes (>620?nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact,” Appl. Phys. Lett. 120, 121102(2022).
7. P. Li, H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of ultra-small 5 × 5 μm2 607?nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%,” Appl. Phys. Lett. 120, 041102 (2022). (Featured on the cover of APL, Covered by Nature Photonics)
8. P. Li, A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “High-temperature electroluminescence properties of InGaN red 40?×?40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%,” Appl. Phys. Lett. 119, 231101 (2021).
9. P. Li, H. Li, H. Zhang, C. Lynsky, I. Mike, J. Speck, S. Nakamura, S. P. DenBaars, “Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm,” Appl. Phys. Lett. 119, 081102(2021).
10. P. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control,” Appl. Phys. Lett. 118, 261104(2021). (Feature Article and Scilight of APL)
11. P. Li, H. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, J. Speck, S. Nakamura, S. P. DenBaars, “Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control,” Optics Express 29, 22001(2021).
12. P. Li, H. Zhang, M. Iza, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Optimization of efficient metalorganic chemical vapor deposition grown TJs for InGaN light-emitting diodes: epitaxy design and light extraction simulation,” Semiconductor Science and Technology 36, 035019(2021).
13. P. Li, H. Zhang, H. Li, Y. Zhang. Y. Yao, N. Palmquist, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage,” Semiconductor Science and Technology 35, 125023(2020). (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/nov/ucsb-121120.shtml)
14. P. Li, H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, S. P. DenBaars “Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition,” Optics Express 28, 18707(2020). (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jul/ucsb-160720.shtml)
15. H. Li, H. Zhang, J. Song, P. Li, S. Nakamura, S. P. DenBaars, “Toward heteroepitaxially grown semipolar GaN laser diodes under electrically-injected continuous-wave mode: from materials to lasers,” Applied Physics Review 7, 041318(2020).
16. H. Zhang,# P. Li,# H. Li, S. Nakamura, S. P. DenBaars, “Electrically driven, highly polarized monolithic white semipolar (20-21) InGaN micro-light-emitting diodes with surface plasmon coupled indium tin oxide gratings,” Appl. Phys. Lett., 117, 181105(2020).
17. H. Zhang, H. Li, P. Li, J. Song, J. S. Speck, S. Nakamura, S. P. DenBaars, “Room-temperature continuous-wave electrically driven semipolar (20-21) blue laser diodes heteroepitaxially grown on sapphire substrate,” ACS Photonics 7, 1662(2020). (Corresponding author). (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/aug/ucsb-060820.shtml).
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美国专利

P. Li, H. Li, S. Nakamura, S.P. DenBaars, Monolithic, cascaded, multiple color light-emitting diodes with independent junction control, US Patent App. 18/263,566.
P. Li, H. Li, M. Iza, S. Nakamura, S.P. DenBaars, Activation of p-type layers of tunnel junctions, US Patent App. 18/041,269
 

国家级高层次青年引进人才计划(2024)

微电子、电子科学与技术、材料工程、半导体物理