| 教育和工作经历 |
2010-08 ------至今, 厦门大学, 物理学系, 教授
2004-08 至 2010-07, 厦门大学, 物理系, 副教授
2001-08 至 2004-07, 厦门大学, 物理系, 讲师
1996-09 至 2001-07, 厦门大学, 凝聚态物理, 博士
1992-09 至 1996-07, 厦门大学, 物理学, 学士 |
代表性文章或专著 |
1.Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar-Blind Photodetecting Paper, Small, 2200563 (2022)
2.Modulation of ZnO nanostructure for efficient photocatalytic performance, Nanoscale Research Letters 17,118 (2022)
3.Enhanced photocatalytic performance of TiO2 nanowires by substituting noble metal particles with reduced graphene oxide, Current Applied Physics 44, 33-39 (2022)
4.Band alignment of ZnO-based nanorod arrays for enhanced visible light photocatalytic performance, RSC Adv., 12, 27189–27198 (2022)
5.Enhanced Faraday effects of magneto-plasmonic crystals with plasmonic-hexagonal hole arrays, Optics Express 30(5), 6700 (2022)
6.AlGaN紫外激光器量子垒层和n型波导层设计优化研究, 激光与光电子学进展60(5), 0514005 (2022)
7.AlGaN基紫外激光器超晶格p型注入层研究，厦门大学学报（自然科学版）61(2), 202-206(2022)
8.Recent advances and perspectives in photoinduced enhanced Raman spectroscopy, Nanoscale, 13, 8707–8721 (2021)
9.Design and fabrication of high power InGaN blue laser diode over 8 W, Optics and Laser Technology 139, 106985 (2021)
10.Band engineering of ZnO/Si nanowire arrays in Z-scheme heterojunction for efficient dye photodegradation, Applied Surface Science 529,147023 (2020)
11.Optoelectronic Properties of MoS2/g-ZnO van der Waals Heterostructure Investigated by First-Principles Calculations, Journal of ELECTRONIC MATERIALS, 49( 8) 4557, (2020)
12.Resonant light absorption and plasmon tunability of lateral triangular Au nanoprisms array, Physics Letters A 383, 125881 (2019)
13.Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units, Cryst. Growth Des. 19, 1720−1727 (2019)
14.Hierarchical ZnO/Si nanowire arrays as an effective substrate for surface-enhanced Raman scattering application, SENSORS AND ACTUATORS B-CHEMICAL 273: 48-55 (2018)
15.Magneto-optical Studies of Noble Metal-Magnetic Dielectric Systems, Plasmonics 13:31–38 (2018)
16.Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping, IEEE Photonics Journal 9(3), 2200807 (2017)
17.Optical properties of InN studied by spectroscopic ellipsometry, Journal of Semiconductors 37(10), 102002 (2016)
18.Improved characteristics of ultraviolet AlGaN multiplequantum-well laser diodes with step-graded quantum barriers close to waveguide layers, Superlattices and Microstructures 97, 1-7 (2016)
19.Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles, Scientific Reports, 6, 29170 (2016)
20.Optimized design of multi-shell ZnO/TiO2/ZnSe nanowires decorated with Ag nanoparticles for photocatalytic applications, RSC Adv., 6, 71800–71806 (2016)
21.Family ofCu@metalnanowires network for transparent electrodes on n-AlGaN, Phys. Status Solidi A 213(5) , 1209–1212 (2016)
22.Performance enhancement of AlGaN deep-ultraviolet lightemitting diodes with varied superlattice barrier electron blocking layer, Appl. Phys. A 122, 527 (2016)
23.Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD, J. Phys. D: Appl. Phys. 49, 115110 (2016)
24.Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays, Physics Letters A 380, 1044–1048 (2016)
25.Improved p-type conductivity in Alrich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6, 21897 (2016)
26.Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, SCIENTIFIC REPORTS 5:17227 (2015)
27.Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer, SUPERLATTICES AND MICROSTRUCTURES 85:59-66(2015)
28.Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8 eV, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY 40(34):10788-10794(2015)
29.Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS APPLIED MATERIALS & INTERFACES 7(32):17707-17712 (2015)
30.Facile synthesis of composition-tuned ZnO/ZnxCd1-xSe nanowires for photovoltaic applications, Nanoscale Research Letters 10:181 (2015)
31.Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier, IEEE PHOTONICS JOURNAL 7(1): 1400110 (2015)
32.Beneficial effect of alloy disorder on the conversion efficiency of ZnO/ZnxCd1-xSe coaxial nanowire solar cells, JOURNAL OF MATERIALS CHEMISTRY A 3(12), 6360-6365 (2015)
33.Kinetic process of nitridation on the ?-sapphire surface, Journal of Semiconductors 35(11), 116004 (2014)
34.Quantum state engineering with ultra-shortperiod (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale, 6, 14733 (2014)
35.A beyond near-infrared response in a wide-bandgap ZnO/ZnSe coaxial nanowire solar cell by pseudomorphic layers, J. Mater. Chem. A, 2, 14571–14576 (2014)
36.High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability, SCIENTIFIC REPORTS 4, 5166 (2014)
37.Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure, Nanoscale Research Letters 9, 328 (2014)
38.Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, SCIENTIFIC REPORTS 4, 4380 (2014)
39.Band engineering of GaN/AlN quantum wells by Si dopants, JOURNAL OF APPLIED PHYSICS 115, 124305 (2014)
40.Multipole plasmon resonances in self-assembled metal hollow-nanospheres, Nanoscale, 6, 3934–3940 (2014)
41.High Mg effective incorporation in Al-rich AlxGa1 ? xN by periodic repetition of ultimate V/III ratio conditions, Nanoscale Research Letters 9(40) 1-7 (2014)
42.Vacuum Rabi Splitting of Exciton-Polariton Emission in an AlN Film, SCIENTIFIC REPORTS,3, 3551 (2013)
43.Copper Nanowires as Fully Transparent Conductive Electrodes, SCIENTIFIC REPORTS,3,2323 (2013)
44.Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C,117, 14158-14164(2013)
45.Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, LASER & PHOTONICS REVIEWS,7(4),572-579 (2013)
46.Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography, Thin Solid Films 536,136–141 (2013)
47.Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP ADVANCES 3, 052103 (2013)
48.Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications, Nano-Micro Lett. 4 (3), 135-141 (2012)
49.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells, SCIENTIFIC REPORTS(2):816 (2012)
50.Band engineering of type-II ZnO/ZnSe heterostructures for solar cell applications, JOURNAL OF MATERIALS RESEARCH 27( 4), 730-733 (2012)
51.ZnO/ZnSe type II core-shell nanowire array solar cell, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 102, 15-18 (2012)
52.Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, JOURNAL OF APPLIED PHYSICS, 111(11), 113528(2012)
53.Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, JOURNAL OF APPLIED PHYSICS, 111(11), 113710(2012)
54.X-ray reflectivity and atomic force microscopy studies of MOCVD grown AI_xGa_(1-x)N/GaN superlattice structures，半导体学报，32(4)，043006 (2011)
55.Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) 775-780(2011)
56.An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mat. Chem. 21(16) 6020-6026 (2011)
57.Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures, J. Mater. Res., 25(6) 1037-1040 (2010)
58.Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN, J. Phys. Chem. A 114, 9028–9033(2010)
59.Sensitivity enhancement of longitudinally driven giant magnetoimpedance magnetic sensor using magnetoelastic resonance, Sensors and Actuators A 161 62-65(2010)
60.Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry, Optical Materials 32 891–895(2010)
61.Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) 1272-1277 (2010)
62.Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition, Science China (Technological Sciences), 53(3), 766-768 (2010)
63.Magnetoelastic resonance enhancement of longitudinally driven giant magnetoimpedance effect in FeCuNbSiB ribbons, PHYSICA B-CONDENSED MATTER, 405(1), 327-330 (2010)
64.Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, APPLIED PHYSICS LETTERS 96, 101115 (2010) |
