1998.09-2002.07: B.S., Department of Physics, Xiamen University, P. R. China
2002.09-2008.12: Ph. D. in Microelectronics and Solid State Electronics, Xiamen University, P. R. China
2009.08–2010.12: Postdoctoral research, Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan
2011.02 –2017.07: Senior Engineer, Department of Physics, Xiamen University, China
2017.08 –Now: Professorate senior engineer, Department of Physics, Xiamen University, China

[1] J. J. Zheng, J. C. Li*，Z. B. Zhong，W. Lin, L. Chen, K. Y. Li, X. H. Wang, C. L. Chou, S. Q. Li, J. Y. Kang, “Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs”, RSC Advances, 7: 55157~55162, 2017.
[2] J. Zhou, J. C. Li*, S. Q. Lu, J. Y. Kang, and W. Lin, “Characteristics of InN epilayers grown with H2-assistance”, AIP Advances, 7: 115207, 2017.
[3] L. Chen, J. J. Zheng, W. Lin, K. Y. Li, P. Sun, G. Y. Guo, J. C. Li, J. Y. Kang，Abnormal Radiative interband transitions in high-Al-Content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4: 2197~2202, 2017.
[4] W. H. Yang, J. C. Li*, Y. Zhang, P. K. Huang, T. C. Lu, H. C.Kuo, S. P. Li, X. Yang, H. Y. Chen, D. Y. Liu, J . Y. Kang, “High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability”, Scientific reports, 4, 5166, 2014.
[5] K. Huang, N. Gao, C. Z. Wang, X. Chen, J. C. Li*, S. P. Li, X. Yang, J. Y. Kang, “Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localized surface plasmon”, Scientific reports, 4, 4380, 2014.
[6] N. Gao, W. Lin, X. Chen, K. Huang, S. P. Li, J. C. Li, H. Y. Chen, X. Yang, L. Ji, E. T. Yu and J. Y. Kang*, Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale 6, 14733, 2014.
[7] W. H. Yang, J. C. Li*, W. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, Xu. Yang, and J. Y. Kang. “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs”, AIP Advances., 3, 052013, 2013.
[8] J. C. Li*, G. L. Ji, W. H. Yang, P. Jin, H. Y. Chen, W. Lin, S. P. Li, and J . Y. Kang, “Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells”. Chinese Journal of Luminescence. 37, 513, 2016.
[9] T. C. Zheng, W. Lin, R. Liu, D. J. Cai1, J. C. Li, S. P. Li and J. Y. Kang, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific reports, 2, 24, 2016.

[1] National Nature Science Foundation of China, 61874090, “Modulation of high current-density-induced effects in AlGaN quantum structures and deep-UV emission devices ”, 2019.01-2022.12
[2] National Key R&D Program of China, 2018YFB0406702, 2018.07-2021.06    
[3] National Key R&D Program of China, 2016YFB0400101, 2016/06-2020/05    
[4] National Nature Science Foundation of China, U1405253, “AlGaN-based quantum structures and the application for high power deep-UV emission devices”, 2015/01-2018/12    
[5] National Basic Research Program of China, 2012CB619301, “III-nitride based semiconductor materials and the applications for photoelectric devices”, 2012/01-2016/09    
[6] National Nature Science Foundation of China, 11204254, “Fabrication and characteristic of strained AlGaN quantum structures with high Al content”, 2013/01-2015/12