2016- Visiting scholar, Department of Chemistry, Duke University, U.S.A.
2015- Professor, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
2013- Adjunct Associate Professor, Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan
2011-2015 Associate Professor, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
2008-2010 Postdoctoral Researcher, Department of Physics, University of Coimbra, Coimbra, Portugal & Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Lyon I, Villeurbanne Cedex, France.
2006-2008 Postdoctoral fellow, Department of Physics, National Taiwan University, Taipei, Taiwan
2000-2006 Ph. D. in Condensed Matter Physics, Department of Physics, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China (Thesis : Strain related effects of GaN based semiconductor heterostructures) Supervisor: Professor Junyong Kang
1996-2000 B. Sc. in Physics, Department of Physics, Xiamen University, China

1. F. P. Sun, Z. R. Hao, G. Z. Liu, C. P. Wu, S. Q. Lu, S. R. Huang, C. Liu, Q. M. Hong, X. H. Chen, D. J. Cai*, and J. Y. Kang, “p-type conductivity of hexagonal boron nitride as dielectrically tunable monolayer: modulation doping with magnesium”, Nanoscale 10, 4361-4369 (2018).

2. Y. Y. Huang, Z. X. Huang, Z. B. Zhong, X. Yang, Q. M. Hong, H. C. Wang, S. R. Huang, N. Gao, X. H. Chen, D. J. Cai*, and J. Y. Kang,“Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network”, Scientific Reports 8, 13721 (2018).

3. Wael Z. Tawfik, Sung Oh Cho, Jun-Seok Ha, Sang-Wan Ryu, D. J. Cai, and June Key Lee, “Electrochemical Potentiostatic Activation Method for GaN-Based Green Vertical-LEDs”, ECS Journal of Solid State Science and Technology 7, Q47-Q51 (2018).

4. H. C. Wang, C. P. Wu, Y. Y. Huang, F. P. Sun, N. Lin, A. M. Soomro, Z. B. Zhong, X. D. Yang, X. H. Chen, J. Y. Kang, and D. J. Cai*, “One-pot synthesis of superfine core-shell Cu@metal nanowires for highly tenacious transparent LED dimmer”, ACS Applied Materials & Interfaces 8, 28709 (2016).

5. C. P. Wu, A. M. Soomro, F. P. Sun, H. C. Wang, Y. Y. Huang, J. J. Wu, C. Liu, X. D. Yang, N. Gao, X. H. Chen, J. Y. Kang, and D. J. Cai*, "Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer", Scientific Reports 6, 34766 (2016).

6. T. C. Zheng, W. Lin, R. Liu, D. J. Cai, J. C. Li, S. P. Li and J. Y. Kang*, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific Reports 6， 21897 (2016,).

7. H. M. Xu, H. C. Wang, C. P. Wu, N. Lin, A. M. Soomro, H. Z. Guo, C. Liu, X. D. Yang, Y. P. Wu, D. J. Cai*, and J. Y. Kang, "Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode", Nanoscale 7, 10613–10621 (2015).

8. X. H. Chen, H. M. Xu, N. Lin, F. C. Xu , H. Y. Chen, D. J. Cai* and J. Y. Kang, "Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair", Applied Physics Letters 106,111604 (2015).

9. N. Lin, J. J. Wu, H. M. Xu, N. L. Liu, T. C. Zheng, W. Lin, C. Liu and D. J. Cai*, “In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering”, Applied Physics Letters 104, 012110 (2014).

10. H. Z. Guo, N. Lin, Y. Z. Chen, Z. W. Wang, Q. S. Xie, T. C. Zheng, N. Gao, S. P. Li, J. Y. Kang, D. J. Cai* and D. L. Peng, “Copper Nanowires as Fully Transparent Conductive Electrodes”, Scientific Reports 3, 2323 (2013).

11. D. J. Cai*, M. A. L. Marques, and F. Nogueira, “Full Color Modulation of Firefly Luciferase through Engineering with Unified Stark Effect”. Journal of Physical Chemistry B 117 , 13725–13730 (2013).

12. W. Lin, W. Jiang, N. Gao, D. J. Cai*, S. P. Li, and J. Y. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices”, Laser & Photonics Reviews 7, 572 (2013).

13. B. B. Zhang, W. Lin, S. P. Li, Y. Zheng, Xu. Yang, D. J. Cai*, and J. Y. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface”, Journal of Applied Physics 111, 113710 (2012).

14. D. J. Cai, M. A. L. Marques and F. Nogueira, “Accurate color tuning of firefly chromophore by modulation of local polarization electrostatic fields”, Journal of Physical Chemistry B 115, 329 (2011).

15. D. J. Cai, F. C. Xu, J. C. Li, H. Y. Chen, and J. Y. Kang, “Non-contact nanoscale electrical measurements for embedded intrinsic charges by Auger electron spectroscopy”, Nanotechnology 21, 015707 (2010).

16. D. J. Cai, M. A. L. Marques, B. F. Milne and F. Nogueira, “Bio-heterojunction effect on fluorescence origin and efficiency improvement of firefly chromophores”, Journal of Physical Chemistry Letters, 1, 2781 (2010).

17. D. J. Cai, Y. Y. Huang, and H. C. Wang, 一种金属纳米线的透明薄膜LED调光器制备方法 (Fabrication method of transparent LED dimmer film with metal nanowires), China Invention Patent No. ZL201611211603.1（Issued on Jan. 22, 2019）

18. D. J. Cai, F. P. Sun, and A. M. Soomro, 一种透明柔性的压电式纳米发电机的制备方法(Fabrication Method for flexible transparent piezoelectric nanogenerator), China Invention Patent No. ZL201710154030.1 (Issued on Jan. 09, 2019).

19. D. J. Cai, F. P. Sun, and A. M. Soomro, 一种衬底上直接生长氧化锌纳米柱阵列的方法 (Method for direct growth of ZnO nanorod array on arbitary substrate), China Invention Patent No. ZL 201710154036.9 (Issued on Jan. 01, 2019).

20. D. J. Cai, 一种彩色轻质导电纺织线的制作方法(Fabrication method for color light-weight conductive threads), China Invention Patent No. ZL 201610843658.8（Issued on Nov. 30, 2018）.D. J. Cai, C. P. Wu, A. M. Soomro, and J. Y. Kang, 一种在基底上制备晶片级大尺寸六方氮化硼的方法 (Method for growth of wafer-scale hexagonal BN monolayer), China Invention Patent No. ZL201510039073.6 (Issued on Nov. 28, 2017).

22. D. J. Cai, H. C. Wang, N. Lin, H. M. Xu, C. P. Wu, J. Ma, H. Z. Guo, and J. Y. Kang, 一种合金包裹铜纳米线制备多功能核壳纳米材料的方法(Coating technique of alloy on Cu nanowires for multifunctional core-shell nanostructures), China Invention Patent No. ZL201510385468.1 (Issued on Feb. 22, 2017).

23. D. J. Cai, A. M. Soomro, and C. P. Wu, H. M. Xu 一种直接在Si衬底上生长六方氮化硼二维薄膜的方法 (Method for direct growth of hexagonal BN 2D film on Si substrate), China Invention Patent  ZL201410500423.X (Issued on Jun. 29, 2016).

24. D. J. Cai, H. M. Xu, Y. P. Wu, N. Lin and H. Z. Guo, 一种石墨烯碳膜包裹的铜纳米丝网络的制备方法 (Synthesis of Cu nanosilk networks capsulated by Graphene), China Invention Patent No. ZL201410327046.4 (Issued on Mar. 09, 2016).

National Key R&D Program, “Solid-state ultraviolet light sources and their strained system”  
National Natural Science Foundation, “Core-shell alloy Cu nanowires and DUV transparent electrodes”;  
National Natural Science Foundation, “AlGaN QWs and abruptness improvement”;

LED and Photovoltaic system
Defects in semiconductors
Lectures on semiconductor science and technology
Appreciation of Peking opera