1996-2000B. Sc.in Physics, Department of Physics, Xiamen University, China
2000-2006Ph. D.inCondensed Matter Physics, Department of Physics, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
Thesis: Strain related effects of GaN based semiconductor heterostructuresSupervisor: ProfessorJunyong Kang
2006-2008Postdoctoral fellow, Department of Physics, National Taiwan University, Taipei, Taiwan
2008-2010Postdoctoral Researcher,Department of Physics, University of Coimbra, Coimbra, Portugal & Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Lyon I, Villeurbanne Cedex, France.
2011-2015Associate Professor,School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
2013-Adjunct Associate Professor, Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan
2015-Professor,College of Physical Science and Technology, Xiamen University, China
2016-Visiting scholar, Department of Chemistry, Duke University, U.S.A.

T. C. Zheng, W. Lin, R. Liu, D. J. Cai, J. C. Li, S. P. Li and J. Y. Kang*, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific Reports (2016, in press).
H. C. Wang, H. M. Xu, C. P. Wu, A. M. Soomro, H. Z. Guo, T. B. Wei, S. P. Li, J. Y. Kang, and D. J. Cai*, “Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN”, Physica Status Solidi B (2016, in press).
C. P. Wu, A. M. Soomro, F. P. Sun, H. C. Wang, C. Liu, X. D. Yang, J. Y. Kang, and D. J. Cai*, “Seven-inch large-size synthesis of monolayer hexagonal BN film by low pressure CVD”, Physica Status Solidi B (2016, in press).
H. M. Xu, H. C. Wang, C. P. Wu, N. Lin, A. M. Soomro, H. Z. Guo, C. Liu, X. D. Yang, Y. P. Wu, D. J. Cai*, and J. Y. Kang, "Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode", Nanoscale 7, 10613–10621 (2015).
X. H. Chen, H. M. Xu, N. Lin, F. C. Xu , H. Y. Chen, D. J. Cai* and J. Y. Kang, "Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair", Applied Physics Letters 106,111604 (2015).
D. J. Cai*, N. Lin, H. M. Xu, C. H. Liao and C. C. Yang, “Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall", Nanotechnology 25, 495705 (2014).
X. L. Zhuo, J. C. Ni, J. C. Li, W. Lin, D. J. Cai, S. P. Li, and J. Y. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants”, Journal of Applied Physics 115, 124305 (2014).
T. C. Zheng, W. Lin, D. J. Cai, W. H. Yang, W. Jiang, H. Y. Chen, J. H. Li, S. P. Li and J. Y. Kang, "High Mg effective incorporation in Al-rich AlxGa1 − xN by periodic repetition of ultimate V/III ratio conditions", Nanoscale Research Letters 9, 40 (2014).
J. Zhou, Q. C. Huang, J. C. Li, D. J. Cai*, and J. Y. Kang, “The InN epitaxy via controlling In bilayer”, Nanoscale Research Letters 9, 5 (2014).
N. Lin, J. J. Wu, H. M. Xu, N. L. Liu, T. C. Zheng, W. Lin, C. Liu and D. J. Cai*, “In situ self-release of thick G

DUV-LED（2011~2013）National High Technology Research and Development Program ¥ 800 K
ZnO/ZnSe solar cell（2011~2013）Research Fund for the Doctoral Program of Higher Education ¥ 500 K
Nitride nanowires and quantum confinement（2012~2014）Foundation for University Key Teacher by the Ministry of Education ¥ 900 K
AlGaN QWs and abruptness improvement（2013~2015）National Natural Science Foundation ¥ 300 K
Core-shell alloy Cu nanowires and DUV transparent electrodes（2016~2019）National Natural Science Foundation ¥ 800 K

LED and Photovoltaic system
Defects in semiconductors
Lectrues on semiconductor science and technology
Appreciation of Peking opera