Education：
Sept.1992-Jul.1995Ph.Din Semiconductor Materials and Devices, Jilin University Tutor: Shiyong Liu
Sept.1989-Jul.1992M.S. in Composite Materials, Jilin UniversityTutor: Zhaofu Meng
Sept.1985-Jul.1989 B.S. in Metal Material, Jilin University
Positions Held:
Sept.1998-presentProfessor of Physics, College of Physical Science and Technology, Xiamen University
Jul.1997-Aug.1998Visiting Scholar, Department of Physics, Moscow StateUniversity
Jul.1995-Jul.1997Lecturer, Department of Physics, Xiamen University

1. Ke,Shaoying(1) ;Ye,Yujie(1); Lin,Shaoming(1);Ruan,Yujiao(2); Zhang,Xiaoying(3); Huang, Wei(1); Wang, Jianyuan(1); Li, Cheng(1); Chen, Songyan* (1) Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge, Applied Physics Letters, 2018, 112 2 41601,
2. Han, Xiang(1); Zhang, Ziqi(1); You, Run(1); Zheng, Guorui(2); Li, Cheng(1); Chen, Songyan* (1); Yang, Yong* (2) Capitalization of interfacial AlON interactions to achieve stable binder-free porous silicon/carbon anodes, Journal of Materials Chemistry, 2018, A 6 17 7449-7456
3. Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan* Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 40 ,
4. Ke, Shaoying; Lin, Shaoming; Mao, Danfeng; Ji, Xiaoli; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan* Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 6 2556-2563,
5. Ke, Shaoying; Lin, Shaoming; Li, Xin; Li, Jun; Xu, Jianfang; Li, Cheng; Chen, Songyan* Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer, OPTICS EXPRESS, 2016, 24 3 1943-1952,
6. Han, Xiang; Chen, Huixin; Li, Xin; Lai, Shumei; Xu, Yihong; Li, Cheng; Chen, Songyan*; Yang, Yong* NiSix/a-si Nanowires with Interfacial a-Ge as Anodes for High-Rate Lithium-Ion Batteries, ACS APPLIED MATERIALS & INTERFACES,2016, 8 1 673-679,
7. Han, Xiang(1); Chen, Huixin(2); Zhang, Ziqi(1); Huang, Donglin(1); Xu, Jianfang(1); Li, Cheng(1); Chen, Songyan*(1); Yang, Yong* (2) Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode， Journal of Materials Chemistry A, 2016, 4 45 17757-17763 ,
8. Han, Xiang(1); Chen, Huixin(2); Liu, Jingjing(1); Liu, Hanhui(1); Wang, Peng(1); Huang, Kai(1); Li, Cheng(1); Chen, Songyan* (1); Yang, Yong* (2) A peanut shell inspired scalable synthesis of three-dimensional carbon coated porous silicon particles as an anode for lithium-ion batteries, Electrochimica Acta, 2015, 156 2 11-19,
9. Liu, Hanhui(1); Wang, Peng(1); Qi, Dongfeng(1); Li, Xin(1); Han, Xiang(1); Wang, Chen(1); Chen, Songyan* (1); Li, Cheng(1); Huang, Wei(1) Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height. Applied Physics Letters.2014, 105 19 1044.
10. Qi, Dongfeng (1); Liu, Hanhui (1); Gao, Wei (1); Chen, Songyan* (1); Li, Cheng (1); Lai, Hongkai (1); Huang, Wei (1); Li, Jun(1) Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film. Optics Express. 2013, 21 8 9923-9930.

1. National Natural Science Foundation of China（NSFC）（61534005），Research on High-qulity Ge/Si Heterojunction Material and High-performance PIN Photodector Fabricated Using Wafer-bonding Technology，2016.01-2020.12，RMB 3 million, under study，PI.  
2. Equipment Advance Research Foundation of China, 6140721040411，Foundational Technology concerning Application of Graphene in Battery Industry, 2017.12-2019.12，under study，PI.  
3. National Natural Science Foundation of China（NSFC）（61474081），Research on the key technologies and theories of Si-based long-wavelength optical receiver, 2015.01-2018.12，RMB 890 thousand, completed, CO-PI.  
4. National Program on Key Basic Research Project of China(973 Program)(2013cb632100), Study on luminescent materials and devices for optical interconnection of silicon chips, 2013/1-2017/12, RMB 30000 thousand,