1997／8－2000／7 Institute of Semiconductors, Chinese Academy of Scienc, Ph.Ｄ
1992／8－1995／7 Department of Physics, LanZhou University, master
1988／8－1992／7 Department of Physics, LanZhou University, Bachelor
Work Experience
2004／4-- present: College of physical science and technology, Xiamen University
2002／3－2004／3: Institute of Applied Physics, Tsukuba University, Japan
2000／7－2002／1: Institute of Semiconductors, Chinese Academy of Science
1995／7－1997／8:  Xi'an Institute of microelectronics

1.Zhiwei Huang, Chunyu Yu, Ailing Chang, Yimo Zhao, Wei Huang, Songyan Chen, and Cheng Li,* High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain， 2020, J Mater Sci，https://doi.org/10.1007/s10853-020-04625-3.
2.Guangyang, Lin, Dongxue Liang,Chunu Yu, Haiyang Hong, Yicheng Mao, Cheng Li,* and Songyan Chen，Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated bythree-dimensional Ge condensation technique，Optics Express Vol. 27, No. 22， 32802
3.Lu Zhang1, Haiyang Hong1, Cheng Li1*, Songyan Chen1, Wei Huang1, Jianyuan Wang1, and Hao Wang，High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μm，Applied Physics Express 12, 055504 (2019)
4.Guangyang Lin, Xiaohui Yi, Cheng Li,a) Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Xihuan Xiong, and Jiaming Sun，Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate，Appl. Phys. Lett. 109, 141104 (2016).
5.Guangyang Lin, Chen Wang, Cheng Li, Chaowen Chen, Zhiwei Huang, Wei Huang, Songyan Chen, Hongkai Lai , Chunyan Jin, and Jiaming Sun Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature，Appl. Phys. Lett. 108, 191107 (2016).
6.Zhiwei Huang, Cheng Li*, Guangyang Lin, Shumei Lai, Chen Wang, Wei Huang, Jianyuan Wang, and Songyan Chen, Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact， Appl. Phys. Express 9, 021301 (2016).
7.Qihai Lu, RongHuang, Xiaoling Lan, Xiaowei Chi, Chao Lu, Cheng Li,Zhiguo Wu, JunLi, Genliang Han, Pengxun Yan, Amazing diffusion depth of ultra- thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition, Materials Letters 169(2016)164–167
8.Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai, Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing IEEE Trans. On Electron Devices VOL. 61, NO. 9, SEPTEMBER 2014.
9.Guangyang Lin, Mengrao Tang, Cheng Li,a) Shihao Huang, Weifang Lu, Chen Wang,Guangming Yan, and Songyan Chen，Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height，Appl. Phys. Lett. 103, 253506 (2013)。
10.Shihao Huang,Cheng Li,Cheng zhao Chen, Chen Wang, Guangming Yan,Hongkai Lai, and Songyan Chen， In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition，Appl. Phys. Lett.. 102, 182102 (2013)
11. Shihao Huang, Weifang Lu, Cheng Li,* Wei Huang, Hongkai Lai, and Songyan Chen，A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission， Vol. 21, No. 1，OPTICS EXPRESS640，14 January 2013.
12. Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Guangyang Lin,Jiangbin Wei, Wei Huang, Hongkai Lai, and Songyan Chen，Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nþ/p Diode Achieved by Implantation and Excimer Laser Annealing，Appl. Phys. Express 6 (2013) 106501
13. Mengrao Tang, Cheng Li，Zheng Wu, Guanzhou Liu, Wei Huang, Hongkai Lai, Songyan Chen, “A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1−xGex Epilayers on Si Substrates”, IEEE. Tran. Electron Devices,59（9），2438-2443, (2012).
14. Zheng Wu, Wei Huang, Cheng Li, Hongkai Lai, and Songyan Chen，Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness IEEE Tran. Electron Devices. 59（9），1328， 2012.
15. Yanghua Chen, Cheng LI*, Hongkai Lai, Songyan Chen, Quantum-confined direct band transitions in tensile strained Ge/SiGe qauntum wells on silicon substrate, Nanotechnology, 21，115207，2010.
16. Cheng LI*, Yanghua Chen, Zhiwen Zhou, Hongkai Lai, Songyan Chen, Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator, Appl. Phys. Lett. 95, (2009).
17. Yanghua Chen, Cheng Li*, Zhiwen Zhou, Hongkai Lai, Songyan Chen, Room temperature photoluminescence of tensile-strained Ge/SiGe quantum wells grown on silicon-based germanium virtual substrate, Appl. Phys. Lett. 94, 141902(2009)
18. Cheng Li, Qinqing Yang, Hongjie Wang, Jinzhong Yu, Qiming Wang, Yongkang Li, Junming Zhou, Chenglu Lin,  " Si1-xGex/Si Resonant- Cavity-Enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3mm ", Appl. Phys. Lett., 77(2), p.157,July 10, 2000.

1.National Key R＆Ｄ Program of China，　2018YFB2200103，Si- based  direct band gap GeSn  light emission materials and devices.  
2. Modification of strain in germanium-on-insulator nanobelts for its applications in MOSFET, National Natural Science Foundation of China, 2015/01  
3. Si- based high speed, high sensitivity hybrid integrated photodetectors. National Basic Research Program of China, 2012/01  
4. Si- based materials modified by energy band engineering for enhanced light emission and laser. National Basic Research Program of China, 2013/01  
5. Modulation of Schottky barrier height in metal and germanium contacts, National Natural Science Foundation of China, 2012/01  
6. Si- based germanium materials and devices, National Natural Science Foundation of China, 2011/01

CAD of integrated circuits
Characterization of semiconductor materials and device
Frontier of optoelectronics
photonics and optoelectronics