1998.09-2002.07: B.S., Department of Physics, Xiamen University, P. R. China
2002.09-2008.12: Ph. D. in Microelectronics and Solid State Electronics, Xiamen University, P. R. China
2009.08–2010.12: Postdoctoral research, Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan
2011.02 –2017.07: Senior Engineer, Department of Physics, Xiamen University, China
2017.08 –Now: Professorate senior engineer, Department of Physics, Xiamen University, China

[1] J. J. Zheng, J. C. Li*，Z. B. Zhong，W. Lin, L. Chen, K. Y. Li, X. H. Wang, C. L. Chou, S. Q. Li, J. Y. Kang, “Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs”, RSC Advances, 7: 55157~55162, 2017.
[2] J. Zhou, J. C. Li*, S. Q. Lu, J. Y. Kang, and W. Lin, “Characteristics of InN epilayers grown with H2-assistance”, AIP Advances, 7: 115207, 2017.
[3] L. Chen, J. J. Zheng, W. Lin, K. Y. Li, P. Sun, G. Y. Guo, J. C. Li, J. Y. Kang，Abnormal Radiative interband transitions in high-Al-Content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4: 2197~2202, 2017.
[4] W. H. Yang, J. C. Li*, Y. Zhang, P. K. Huang, T. C. Lu, H. C.Kuo, S. P. Li, X. Yang, H. Y. Chen, D. Y. Liu, J . Y. Kang, “High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability”, Scientific reports, 4, 5166, 2014.
[5] K. Huang, N. Gao, C. Z. Wang, X. Chen, J. C. Li*, S. P. Li, X. Yang, J. Y. Kang, “Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localized surface plasmon”, Scientific reports, 4, 4380, 2014.
[6] N. Gao, W. Lin, X. Chen, K. Huang, S. P. Li, J. C. Li, H. Y. Chen, X. Yang, L. Ji, E. T. Yu and J. Y. Kang*, Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale 6, 14733, 2014.
[7] W. H. Yang, J. C. Li*, W. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, Xu. Yang, and J. Y. Kang. “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs”, AIP Advances., 3, 052013, 2013.
[8] J. C. Li*, G. L. Ji, W. H. Yang, P. Jin, H. Y. Chen, W. Lin, S. P. Li, and J . Y. Kang, “Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells”. Chinese Journal of Luminescence. 37, 513, 2016.
[9] T. C. Zheng, W. Lin, R. Liu, D. J. Cai1, J. C. Li, S. P. Li and J. Y. Kang, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific reports, 2, 24, 2016.
[10] C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li*, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers”, Applied Physics Letters, 97,171106, 2011.
[11] C. H. Wang, S. P. Chang, H. W. Wang, J. C. Li*, W. T. Chang, Y. S. Lu, Z. Y. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”, Applied Physics Letters, 97, 181101, 2010.
[12] C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li*, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”, Applied Physics Letters, 97, 261103, 2010.
[13] S. P. Chang, C. H. Wang, J. C. Li*, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer”, Applied Physics Letters, 97, 251114, 2010.
[14] J. C. Li, T. C. Lu, H. M. Huang, W. W. Chan, H. C. Kuo, and S. C. Wang, “Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN MQWs”, Journal of Applied Physics, 108, 063508, 2010.
[15] J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si--codoped AlxGa1-xN/AlyGa1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, 2009.
[16] J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, 2009.
[17] J. C. Li, S. P. Li, and J. Y. Kang, “Quantized level transitions and modification in InGaN/GaN multiple quantum wells”, Applied Physics Letters, 92 (10), 101929-1-101929-3, 2008.
[18] J. C. Li, and J. Y. Kang, “Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant”, Applied Physics Letters, 91 (15), 152106-1-152106-3, 2007.
[19] J. C. Li, and J. Y. Kang, “Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from the first-principles calculations”, Physical Review B, 71 (3), 035216-1-035216-4, 2005.
[20] J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, 2009.
[21] J. C. Li, and J. Y. Kang, “Codoped configuration effect on p-type doping efficiency in GaN”, in the proceedings of 2004. 9. SIMC-XIII, IEEE press, 57-60, 2005.

[1] National Nature Science Foundation of China, 61874090, “Modulation of high current-density-induced effects in AlGaN quantum structures and deep-UV emission devices ”, 2019.01-2022.12    
[2] National Key R&D Program of China, 2018YFB0406702, 2018.07-2021.06    
[3] National Key R&D Program of China, 2016YFB0400101, 2016/06-2020/05    
[4] National Nature Science Foundation of China, U1405253, “AlGaN-based quantum structures and the application for high power deep-UV emission devices”, 2015/01-2018/12    
[5] National Basic Research Program of China, 2012CB619301, “III-nitride based semiconductor materials and the applications for photoelectric devices”, 2012/01-2016/09    
[6] National Nature Science Foundation of China, 11204254, “Fabrication and characteristic of strained AlGaN quantum structures with high Al content”, 2013/01-2015/12