Li Shuping, Male, Doctor of Science, Professor. He is one of the vice presidents of college of physical science and technology, Xiamen University. He has been engaged in theoretical and experimental study of semiconductor optoelectronic materials and devices. In recent years, he mainly studies the GaN epitaxial technology, had completed the wavelength less than 280nm deep UVLED epitaxy and realized wavelength tunable. He presided the Fujian Natural Science Foundation, subproject of the National High Technology Research and Development Program (863 Program) and other projects. He had published more than 50 papers on Nanotechnology, Appl. Phys. Lett. And other domestic and foreign academic journals, had applied for a number of national invention patents, had won one award of Xiamen Municipal Science and Technology Progress.

1. Optical properties of InN studied by spectroscopic ellipsometry, Journal of Semiconductors 37(10), 102002 (2016)
2. Improved characteristics of ultraviolet AlGaN multiplequantum-well laser diodes with step-graded quantum barriers close to waveguide layers, Superlattices and Microstructures 97, 1-7 (2016)
3. Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles, Scientific Reports, 6, 29170 (2016)
4. Optimized design of multi-shell ZnO/TiO2/ZnSe nanowires decorated with Ag nanoparticles for photocatalytic applications, RSC Adv., 6, 71800–71806 (2016)
5. Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN, Phys. Status Solidi A 213(5) , 1209–1212 (2016)
6. Performance enhancement of AlGaN deep-ultraviolet lightemitting diodes with varied superlattice barrier electron blocking layer, Appl. Phys. A 122, 527 (2016)
7. Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD, J. Phys. D: Appl. Phys. 49, 115110 (2016)
8. Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays, Physics Letters A 380, 1044–1048 (2016)
9. Improved p-type conductivity in Alrich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6, 21897 (2016)
10. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, SCIENTIFIC REPORTS 5:17227 (2015)
11. Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer, SUPERLATTICES AND MICROSTRUCTURES 85:59-66(2015)
12. Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8 eV, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY 40(34):10788-10794(2015)
13. Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS APPLIED MATERIALS & INTERFACES 7(32):17707-17712 (2015)
14. Facile synthesis of composition-tuned ZnO/ZnxCd1-xSe nanowires for photovoltaic applications, Nanoscale Research Letters 10:181 (2015)
15. Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier, IEEE PHOTONICS JOURNAL 7(1): 1400110 (2015)
16. Beneficial effect of alloy disorder on the conversion efficiency of ZnO/ZnxCd1-xSe coaxial nanowire solar cells, JOURNAL OF MATERIALS CHEMISTRY A 3(12), 6360-6365 (2015)
17. Kinetic process of nitridation on the ?-sapphire surface, Journal of Semiconductors 35(11), 116004 (2014)
18. Quantum state engineering with ultra-shortperiod (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale, 6, 14733 (2014)
19. A beyond near-infrared response in a wide-bandgap ZnO/ZnSe coaxial nanowire solar cell by pseudomorphic layers, J. Mater. Chem. A, 2, 14571–14576 (2014)
20. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability, SCIENTIFIC REPORTS 4, 5166 (2014)
21. Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure, Nanoscale Research Letters 9, 328 (2014)
22. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, SCIENTIFIC REPORTS 4, 4380 (2014)
23. Band engineering of GaN/AlN quantum wells by Si dopants, JOURNAL OF APPLIED PHYSICS 115, 124305 (2014)
24. Multipole plasmon resonances in self-assembled metal hollow-nanospheres, Nanoscale, 6, 3934–3940 (2014)
25. High Mg effective incorporation in Al-rich AlxGa1 ? xN by periodic repetition of ultimate V/III ratio conditions, Nanoscale Research Letters 9(40) 1-7 (2014)
26. Vacuum Rabi Splitting of Exciton-Polariton Emission in an AlN Film, SCIENTIFIC REPORTS,3, 3551 (2013)
27. Copper Nanowires as Fully Transparent Conductive Electrodes, SCIENTIFIC REPORTS,3,2323 (2013)
28. Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C,117, 14158-14164(2013)
29. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, LASER & PHOTONICS REVIEWS,7(4),572-579 (2013)
30. Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography, Thin Solid Films 536,136–141 (2013)
31. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP ADVANCES 3, 052103 (2013)
32. Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications, Nano-Micro Lett. 4 (3), 135-141 (2012)
33. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells, SCIENTIFIC REPORTS(2):816 (2012)
34. Band engineering of type-II ZnO/ZnSe heterostructures for solar cell applications, JOURNAL OF MATERIALS RESEARCH 27( 4), 730-733 (2012)
35. ZnO/ZnSe type II core-shell nanowire array solar cell, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 102, 15-18 (2012)
36. Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, JOURNAL OF APPLIED PHYSICS, 111(11), 113528(2012)
37. Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, JOURNAL OF APPLIED PHYSICS, 111(11), 113710(2012)
38. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AI_xGa_(1-x)N/GaN superlattice structures，半导体学报，32(4)，043006 (2011)
39. Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) 775-780(2011)
40. An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mat. Chem. 21(16) 6020-6026 (2011)
41. Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures, J. Mater. Res., 25(6) 1037-1040 (2010)
42. Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN, J. Phys. Chem. A 114, 9028–9033(2010)
43. Sensitivity enhancement of longitudinally driven giant magnetoimpedance magnetic sensor using magnetoelastic resonance, Sensors and Actuators A 161 62-65(2010)
44. Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry, Optical Materials 32 891–895(2010)
45. Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) 1272-1277 (2010)
46. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition, Science China (Technological Sciences), 53(3), 766-768 (2010)
47. Magnetoelastic resonance enhancement of longitudinally driven giant magnetoimpedance effect in FeCuNbSiB ribbons, PHYSICA B-CONDENSED MATTER, 405(1), 327-330 (2010)
48. Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, APPLIED PHYSICS LETTERS 96, 101115 (2010)

1. National Key Key Research and Development Program: Structural Design and Mechanism Study of Solid State Ultraviolet Light Source Quantum Strain System (2016.07-2021.06)  
2. Sub-project of National “863” Project: Research on Preparation Technology of High Aluminum Component Nitride Materials (2014.01-2016.12)  
3. Xiamen Science and Technology Plan Project: Research on Design and Preparation of Novel Semiconductor Low-Dimensional Structural Materials (2011.08-2013.07)  
4. Sub-project of the National "863" Program: Deep-UV LED Epitaxial Growth and Applied Technology Research (2011.01-2013.12)  
5. The National Natural Science Foundation of China major research project cultivation project: the construction of the same quantum dot lattice and its coupling between quantum states (2010.01-2012.12)  
6. Xiamen Science and Technology Plan Project: Research on Characteristics of High Efficiency Multi-junction Solar Cells (2009.08-2011.08)  
7. Key Project of National Natural Science Foundation of China: Development of In-situ Semiconductor Nanostructure Comprehensive Test System (2009.01-2011.12)  
8. Key Project of Fujian Science and Technology Plan: Preparation of GaN-based UV LED Chips (2007.05-2009.06)  
9. Xiamen Science and Technology Plan Project: High-Performance GaN-Based LED Chip with Stable Wavelength (2006.1-2007.12)  
10. National "863" Program: GaN-based semiconductor material design and development of key epitaxial technologies (2006.10-2008.09)

Undergraduate courses: Thermodynamics Statistics Physics, Semiconductor Physics
Graduate courses: Nonlinear Material Design