Wu Yaping, Ph.D., CO cultivated by the Department of physics of Xiamen University and UT-Austin of the United States, received the Ph.D. in Microelectronics and solid state electronics in 2012. She is a member of China Vacuum Society and a supervisor of Xiamen Physics Society. She commits to semiconductor new structural materials and new functional devices research work, and has presided over and undertaken more than 20 national and provincial scientific and technological projects, published more than 60 SCI papers, which were cited more than 2800 times. She has authorized more than 20 patents, and invited reports from international and domestic academic conferences for many times.

1. In-plane Anisotropy of Quantum Transport in Artificial Two dimensional Au Lattices, Nano Letters, 2018, 18(3): 1724-1732.
2. Crystal Structure Evolution of Individual Graphene Islands During CVD Growth on Copper Foil, Advanced Materials, 2013, 25(46): 6744-6751.
3. Tuning the Doping Type and Level of Graphene with Different Gold Configurations, Small, 2012, 8(20): 3129-3136.
4. Polarization-Controllable Plasmonic Enhancement on the Optical Response of Two-Dimensional GaSe Layers, ACS Applied Materials & Interfaces, 2019, 11(21): 19631-19637.
5. Strain Manipulation of the Polarized Optical Response in Two-dimensional GaSe Layers, Nanoscale, 2020, 12(6): 4069-4076.
6. Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes, Applied Physics Express, 2020, 13: 043006.
7. Identically Sized Co Quantum Dots on Monolayer WS2 Featuring Ohmic Contact, Physical Review Applied, 2020, 13(2): 024003.
8. Modulation of Spin-Valley Splitting in Two-Dimensional MnPSe3/CrBr3 van der Waals Heterostructure, Journal of Physics D: Applied Physic, 2020, 53(12): 125104.
9. Deeply Exploring Anisotropic Evolution Towards Large-Scale Growth of Monolayer ReS2, ACS Applied Materials & Interfaces, 2019, 12(2): 2862-2870.
10. Large and Controllable Spin-Valley Splitting inmTwo-Dimensional WS2 /h-VN Heterostructure, Physical Review B, 2019, 100(19): 195435.
11. Regulating the Circular Polarization in Nitride-Based Light-Emitting Diodes Through the Spin Injection, Applied Physics Express, 2019, 12(12): 123005-123005.
12. Hydrothermally Stable ZnAl2O4 Nanocrystals with Controlled Surface Structures for the Design of Long-Lastin and Highly Active/Selective PdZn Catalysts, Green Chemistry, 2019, 21(24): 6574-6578.
13. Plasmon-Enhanced Exciton Emissions and Raman Scattering of CVD-Grown Monolayer WS2 on Ag Nanoprism Arrays, Applied Surface Science, 2019, 504: 144252.
14. Improved Open-Circuit Voltage and Repeatability of Perovskite Cells Based on Double-Layer Lead Halide Precursors Fabricated by a Vapor-Assisted Method , ACS Applied Materials & Interfaces, 2019, 11(27): 24132-24139.
15. Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices , ACS Applied Materials & Interfaces, 2019, 11(21): 19381-19387.
16. Elect rically Controllable Magnetic Properties of Fe-doped GaSe Monolayer , Journal of Physics D: Applied Physics, 2019, 52(17): 175001.
17. Modification of the Electronic and Spintronic Properties of Monolayer GaGeTe with a Vertical Electric Field , Journal of Physics D: Applied Physics, 2019, 52(11): 115101.
18. Stress Engineering on the Electronic and Spintronic Properties for a GaSe/HfSe2 van der Waals Heterostructure , Applied Physics Express, 2019, 12(3): 031002.
19. Enhanced Photocatalytic Efficiency of ZnO/ZnSe Coaxial Nanowires through Interfacial Strain Modification, Physica E:Low-Dimensional Systems & Nanostructures, 2018, 103: 430-434.
20. Manipulation of Perpendicular Magnetic Anisotropy of Single Fe Atom Adsorbed Graphene via MgO(111) Substrate, Journal of Physics D: Applied Physics, 2018, 51(20): 205001.
21. Tuning the Electronic, Optical, and Magnetic Properties of Monolayer GaSe with a Vertical Electric Field, Physical Review Applied, 2018, 9(4): 044029.
22. Electrically Tunable Magnetic Configuration on Vacancy-Doped GaSe Monolayer, Physics Letters A, 2018, 382(9): 667-672.
23. Strong Anti-Strain Capacity of CoFeB/MgO Interface on Electronic Structure and State Coupling, Chinese Physics B, 2018, 27(1): 017502.
24. Effect of External Strain on the Charge Transfer: Adsorption of Gas Molecules on Monolayer GaSe , Materials Chemistry and Physics, 2017, 198: 49-56.
25. Modification of Spin Electronic Properties of Fe-n/GaSe Monolayer Adsorption System, Acta Physcia Sinica, 2017, 66(16): 166301.
26. Effects of Interlayer Polarization Field on the Band Structures of the WS2/MoS2 and WSe2/MoSe2 Heterostructures , Surface Science,
27. Modulation of Electronic and Optical Anisotropy Properties of ML-GaS by Vertical Electric Field, Nanoscale Research Letters, 2017, 12: 409.
28. Nonuniform Effect of Carrier Separation Efficiency and Light Absorption in Type-II Perovskite Nanowire Solar Cells , Nanoscale Research Letters, 2017, 12: 160.
29. Effect of Surface Morphology and Magnetic Impurities on the Electronic Structure in Cobalt-Doped BaFe2As2 Superconductors , Nano Letters, 2017, 17(3): 1642-1647.
30. Magnetic Modification of GaSe Monolayer by Absorption of Single Fe Atom, RSC Advanced, 2017, 7(8): 4285-4290.
31. Enhanced Magneto-Optical Effects in Composite Coaxial Nanowires Embedded with Ag Nanoparticles, Scientific Reports, 2016, 6: 29170.
32. Doping Behaviors of Adatoms Adsorbed on Phosphorene , Physica Status Solidi B-Basic Solid State Physics, 2016, 253(6): 1156-1166.
33. Effects of Nitrogen Dopants on the Atomic Step Kinetics and Electronic Structures of O-polar ZnO , Nanoscale, 2016, 8(7): 4381-4386.
34. Evolution of Band Structures in MoS2-Based Homo- and Heterobilayers, Journal of Physics D: Applied Physics, 2016, 49(6): 065304.
35. Effects of Thermally-Induced Changes of Cu Grains on Domain Structure and Electrical Performance of CVD-Grown Graphene, Nanoscale, 2016, 8(2): 930-937.
36. Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS Applied Materials & Interfaces, 2015, 7(32): 17707-17712.
37. Theoretical Study of the Interaction of Electron Donor and Acceptor Molecules with Monolayer WS2 , Journal of Physics D: Applied Physics, 2015, 48(28): 285303.
38. Au and Ti induced Charge Redistributions on Monolayer WS2 , Chinese Physics B, 2015, 24(7): 77301.
39. Direct Synthesis of Graphene 3D-Coated Cu Nanosilks Network for Antioxidant Transparent Conducting Electrode, Nanoscale, 2015, 7(24): 10613-10621.
40. Effect of Boron in Fe/MgO Interface on Structural Stability and State Coupling, Computational Materials Science, 2015, 101: 138-142.
41. Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7x7) Surface , Nano-Micro Letters, 2015, 7(2): 194-202.
42. Metal-Atom-Induced Charge Redistributions and Their Effects on the Electrical Contacts to WS2 Monolayers, Physica Status Solidi B-Basic Solid State Physics, 2015, 252: 1783-1791.
43. First-Principles Calculations of Perpendicular Magnetic Anisotropy in Fe1-xCox/MgO(001) Thin Films , Nanoscale Research Letters, 2015, 10: 126.
44. Two-Dimensional Au Lattices Featuring Unique Carrier Transport Preference and Wide Forbidden Gap , Nanoscale, 2014, 6(17): 10118-10125. (期刊论文)
45. Selective Surface Functionalization at Regions of High Local Curvature in Graphene, Chemical Communications, 2013, 49(7): 677-679.
46. Growth Mechanism and Controlled Synthesis of AB-Stacked Bilayer Graphene on Cu-Ni Alloy Foils , ACS Nano, 2012, 6(9): 7731-7738.
47. Toward the Controlled Synthesis of Hexagonal Boron Nitride Films, ACS Nano, 2012, 6(7): 6378-6385.
48. Selective-Area Fluorination of Graphene with Fluoropolymer and Laser Irradiation, Nano Letters, 2012, 12(5): 2374-2378.
49. Detection of Sulfur Dioxide Gas with Graphene Field Effect Transistor, Applied Physics Letters, 2012, 100(16): 163114.
50. Low-Temperature Chemical Vapor Deposition Growth of Graphene from Toluene on Electropolished Copper foils, ACS Nano, 2012, 6(3): 2471-2476.
51. Highly Conductive and Porous Activated Reduced Graphene Oxide Films for High-Power Supercapacitors, Nano Letters, 2012, 12(4): 1806-1812.
52. van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene, Nano Letters, 2012, 12(3): 1431-1436.
53. An Improved Method for Transferring Graphene Grown by Chemical Vapor Deposition, Nano, 2012, 7(1): 1150001.
54. Graphene Growth Using a Solid Carbon Feedstock and Hydrogen , ACS Nano, 2011, 5(9): 7656-7661.
55. Synthesis and Characterization of Large-Area Graphene and Graphite Films on Commercial Cu-Ni Alloy Foils, Nano Letters, 2011, 11(9): 3519-3525.
56. A Simple Route to Fabricate High Sensibility Gas Sensors Based on Erbium Doped ZnO Nanocrystals, Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2011, 384(1-3): 580-584.
57. Atomic Structure and Formation Mechanism of Identically Sized Au Clusters Grown on Si(111)-(7x7) Surface, Journal of Chemical Physics, 2010, 133(12): 124706.
58. Square ZnO Nano-Column and Its Thermal Evolution, Science: China Technological Sciences, 2010, 53(2): 309-312.
59. A Hierarchical Lattice Structure and Formation Mechanism of ZnO Nano-Tetrapods, Nanotechnology, 2009, 20(32): 325709.
60. Pressure Induced Wurtzite-to-Zinc Blende Phase Transition in ZnO at Finite Temperature, Journal of Materials Research, 2008, 23(12): 3347-3352.

Representative patents:
1.National authorized invention patent: An all electrical controlled spin luminescence detector and its preparation method, January 17, 2020, China, ZL 2018 1 0540087. X
2.National authorized invention patent:An electric field controlled two-dimensional spintronic device and its preparation method, 2020-02-21, China, ZL 2018 1 0559006.0
3.National authorized invention patent:A joint, two-dimensional material and its growth device and method for tubular CVD furnace, September 6, 2019, China, ZL 2018 1 0541023.1
4.National authorized invention patent:A two-dimensional optical rotator with adjustable electric field polarizability, May 31, 2019, China, ZL 2018 2 0922881.6
5.National authorized invention patent:A two-dimensional spintronic device with controllable polarizability, April 9, 2019, China, ZL 2018 2 0923579.2

1.National Science Fund for Excellent Young Scholars: Growth of quantum structure and development of their semiconductor properties    
2.State Natural Sciences Foundation Monumental Projects: Lattice construction and quantum state coupling characterization of identical quantum dots    
3.National Key Research and Development Program of China: Research on new semiconductor structural materials and new functional devices    
4.National Natural Science Foundation of China: Heteroepitaxy of nitride/antiferromagnetic two-dimensional materials and the controlled application of spin-valley coupling    
5.National Natural Science Foundation of China: Controllable preparation and spin property study of two-dimensional Group III-VI metal-monochalcogenides and heterostructures    
6.National Natural Science Foundation of China: Simulation, characterization, and control of the spintronic structure of ferromagnetic materials with different dimensions    
7.Science and Technology Project of Fujian Province of China: Preparation and performance of high efficiency flexible thin film solar cells    
8.General project of Fujian Natural Science Foundation: Regulation of electron spin characteristics in two-dimensional narrow bandgap semiconductors    
9.Outstanding Youth Foundation Project of Jiujiang: Spin modulation of Nitride semiconductors and their applications in spin-LEDs    

1. Specialized Experiments
2. College Physics Experiments
3. Open Experiments
4. Comprehensive Design Experiments