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黄巍

黄巍的头像

个人信息

职称
助理教授
Email
weihuang@xmu.edu.cn
个人主页
http://210.34.16.118/Article/ShowArticle.asp?ArticleID=788
研究领域

锗相关的电子及光电子器件

个人简历

    黄巍,2008年毕业于上海复旦大学微电子系,获理学博士学位,同年到韩国高丽大学电子系参加博士后工作。2009年7月加入厦门大学物理系,任助理教授。

发表文章
1. Shuwan Pan, DongFeng Qi, Songyan Chen, Cheng Li, Wei Huang, Hongkai Lai, Se ultrathin film growth on Si (10.0) substrate and its application in Ti/n-Si(100) ohmic contact, Acta Physica Sinca, 2011, 60(9): 098108-1-5
2. Mengrao Tang, Wei Huang, Cheng Li, Hongkai Lai, and Songyan Chen, Thermal stability of nickel germanide formed on tensile-strained Ge epilayer on Si substrate, IEEE Electron. Dev. Lett., 31, 863-865 (2010).
3. Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Yttrium silicide formation and its contact properties on Si(100). Microelectronics Engineering, 85, 131-135 (2008).
4. Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Effect of Pt addition on the stress of NiSi film formed on Si(100), Chinese Journal of Semiconductors, 28, 635-639 (2007).
5. W. Huang, G.P. Ru, Y.L. Jiang, X.P. Qu, B.Z. Li, R. Liu, Improvement of Er-silicide formation on Si(100) by W capping. Thin Solid Films, 516, 4252-4257 (2008).
6. W. Huang, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Erbium silicide formation and its contact properties on Si(100). Journal of Vacuum Science and Technology B, 26, 164-170 (2008).
7. W. Huang, Y.L. Min, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Effect of erbium interlayer on nickel silicide formation on Si(100). Applied Surface Science, 254, 2120-2123 (2008).
任教课程

大学物理B

历史

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