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海韵 415 办公室




(1) Resistive switching properties of polycrystalline HfOxNy films by plasma-enhanced atomic layer deposition, Jue Yu, Wei Huang(*), Chao Lu, Guangyang Lin, Cheng Li, Songyan Chen,  Jianyuan Wang, Jianfang Xu, Chunli Liu, and Hongkai Lai. Japanese Journal of Applied Physics, 56, 050304, (2017).
(2) Chao Lu, Jue Yu, Xiao-Wei Chi, Guang-Yang Lin, Xiao-Ling Lan, Wei Huang(*), Jian-Yuan Wang, Jian-Fang Xu, Chen Wang, Cheng Li, Song-Yan Chen, Chunli Liu, Hong-Kai Lai, Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics, Applied Physics Express, 9(4), 041501, (2016).
(3) Millaty Mustaqima, Pilsun Yoo, Wei Huang, Bo Wha Lee, and Chunli Liu(*), Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films, Nanoscale Research Letters, 10, 168, (2015).
(4) Wei Huang(*), Chao Lu, Jue Yu, Jiang-Bin Wei, Chao-Wen Chen, Chen Wang, Cheng Li, Song-Yan Chen, Chun-Li Liu, and Hong-Kai Lai, High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature, Chinese Physics B, 25(5), 057304, (2016).
(5) Wei Jiang-Bin, Chi Xiao-Wei, Lu Chao, Wang Chen, Lin Guang-Yang, Wu Huan-Da, Huang Wei(*), Li Cheng(*), Chen Song-Yan, Liu Chun-Li, Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride, Chinese Physics B, 24(7), 077306, (2015).
(6) Huan Da Wu, Chen Wang, Jiang Bin Wei, Wei Huang(*), Cheng Li, Hong Kai Lai, Jun Li, Chunli Liu, and Song Yan Chen, Ohmic Contact to n-Type Ge With Compositional W Nitride, IEEE Electron Device Letters, 35(12), 1188~1190, (2014).
(7) Wei Huang(*), Mengrao Tang, Chen Wang, Cheng Li, Jun Li, Songyan Chen, Chunlai Xue, and Hongkai Lai, Texture Evolution and Grain Competition in NiGe Film on Ge(001), Applied Physics Express, 6(7), 075505, (2013).
(8) H. D. Wu, W. Huang(*), W. F. Lu, R. F. Tang, C. Li*, H. K. Lai, S. Y. Chen, and C. L. Xue, Ohmic contact to n-type Ge with compositional Ti nitride, Applied Surface Science, 284, 877~880, (2013).
(9) Mengrao Tang, Wei Huang(*), Cheng Li(*), Hongkai Lai, and Songyan Chen, Thermal Stability of Nickel Germanide Formed on Tensile-Strained Ge Epilayer on Si Substrate, IEEE Electron Device Letters, 31(8), 863~865, (2010).
(10) Zheng Wu, Wei Huang, Cheng Li(*), Hongkai Lai, Songyan Chen, Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness, IEEE Transactions on Electron Devices, 59(5), 1328-1331, (2012).
(11) 授权发明专利:黄巍,魏江镔,陈松岩,李成,横向p-i-n结构Ge光电探测器的制备方法,2016.01.06,中国,CN201410183675.4

大学物理 B



6 年 32 周