Skip to Content

李成

李成的头像

个人信息

职称
教授
Email
lich@xmu.edu.cn
工作电话
0592-2184220
办公室
海韵校区物理机电航空大楼414室
研究领域

硅基集成光电子材料与器件

硅基微纳电子材料、器件与工艺

个人简历

李成,男,197012月出生,现任厦门大学物理系教授/博导,教育部新世纪优秀人才

学历和研究工作经历

2004.4 厦门大学物理系,副教授/教授(2007年)/博导

2002.32004.3 日本筑波大学物理工学系,助手

2000.72002.1 中国科学院半导体研究所,博士后,取得副研究员资格

199782000.7 中国科学院半导体研究所,博士研究生毕业

1995.71997.8 西安微电子技术研究所,集成电路设计助理工程师

1992.81995.7 兰州大学物理系,凝聚态物理专业 功率器件模拟硕士生毕业

1988.81992.7兰州大学物理系,固体电子学专业 本科毕业

 

代表性研究成果:

共发表学术论文120余篇,其中被SCI收录100余篇,被SCI论文引用690余次,获发明专利授权6项。代表性成果:

1)硅基锗硅材料的外延技术:较系统地研究了大晶格失配材料系锗/硅的外延技术,利用低温缓冲层技术在硅衬底上制备出超低位错密度的锗薄膜。在此基础上,外延出高质量张应变Ge/SiGe多量子阱结构,并首次观测到锗量子阱直接带室温光致发光及其量子限制效应。在硅衬底上外延出调制掺杂Ge/SiGe异质结构,发现调制掺杂可有效提高锗直接带的发光强度,采用SOI衬底观测到微腔增强的室温光荧光。这些结果对基于能带工程的SiGe微电子和光电子器件的研究的打下坚实的材料基础,对具有间接带特性的Ge/Si材料用于光电子器件的可行性提供了重要的实验依据。

2SGOI/GOI材料的制备:系统地研究了硅基SiGe薄膜的氧化行为和氧化过程中应变的弛豫机理,澄清了一直存在争议的SiGe氧化过程中氧化速率饱和的作用机理,修正了Deal-Groove模型在氧化SiGe中的应用,指出氧分子在氧化物中的扩散仍然是限制氧化速率的关键因素。采用外延和氧化相结合的方法制备出锗组份可控的SGOI材料和超薄GeOI材料,发展下一代微电子器件的重要候选材料之一。

3)锗表面界面及锗器件工艺技术:提出应变增强NiGe薄膜热稳定性的机理,将其热稳定性纪录提高到700oC ,实现与硅工艺的兼容;发现采用纳米尺度TaN薄层可有效调控金属与Ge接触的势垒高度(专利申请号:201010231280.9),提出界面耦极子模型解释势垒高度调制机理。 提出制备Ge n+p浅结的脉冲激光退火新方法,获得高的n-Ge掺杂浓度,高整流比、低漏电流的n+p浅结。

4)硅基长波长光电探测器:研制出系列硅基SiGe/Si多量子阱和Ge共振腔增强型光电探测器,研究结果发表后连续两次被美国光电子杂志Laser Focus World(WDM Solution)撰文在新闻栏目(newsbreakR&D notes)中跟踪报道。该项研究的主要结果分别被Academic press出版的专著“Silicon germanium strained layers and heterostructure”和Springer公司出版的专著“Optical interconnect, the silicon approach”收入,并给予较高的评价。

 

 

 

 

在研基金

主持承担的科研项目:

1.国家自然科学基金面上项目:61474094,绝缘体上锗(GOI)纳米带应变调控机理及其MOSFET研究,2015/01-2018/12。  

2. 国家重点基础研究发展计划(973)子课题,2013CB632103,硅基能带调控发光材料与激光器件,2013/1- 2017/12。

3. 国家重大科学研究计划课题,硅基混合集成高速高灵敏度光电探测器的研制,2012-1016年。

4. 国家重点基础研究(973)计划子课题,基于能带工程的硅基发光材料及原型器件,2007-2011年。

5.  国家自然科学基金重点项目子课题,硅基锗材料外延及相关器件基础研究,2011-2014年。

国家自然科学基金面上项目,金属与锗接触界面微结构及势垒高度调制机理研究,2012-2015

7  教育部博士点基金项目,基于能带工程的硅基锗高效发光材料研究,2012.1-2014.12

国家自然科学基金面上项目,SOI基高速窄谱带长波长锗光电探测器的研究,2007-2009

福建省工业科技重点项目:SOI基高速垂直腔探测器,2006-2009

 

发表文章

以第一作者和/或通信作者发表的代表性论文

 1.  Guangyang Lin, Xiaohui Yi, Cheng Li,a) Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Xihuan Xiong, and Jiaming SunStrong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrateAPPLIED PHYSICS LETTERS 109, 141104 (2016).

2. Guangyang Lin, Chen Wang, Cheng Li, Chaowen Chen, Zhiwei Huang, Wei Huang, Songyan Chen, Hongkai Lai , Chunyan Jin, and Jiaming Sun Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature Applied Physics Letters 108, 191107 (2016).

3. Lu Zhang, YisenWang, Ningli Chen, Guangyang Lin, Cheng Li ⁎, Wei Huang, Songyan Chen,Jianfang Xu, JianyuanWang Raman scattering study of amorphous GeSn films and their crystallization on Si substrates Journal of Non-Crystalline Solids 448 (2016) 74–78.

4. Xiaowei Chi, Xiaoling Lan, Chao Lu, Haiyang Hong, Cheng Li, Songyan Chen, Hongkai Lai, Wei Huang and Jianfang Xu An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices Mater. Res. Express 3 (2016) 035012.

5. Chaowen Chen, Guangyang Lin, Xiaoling Lan, Ningli Chen, Cheng Li, Songyan Chen,Wei Huang, and Hongkai LaiImpacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge MembraneECS Journal of Solid State Science and Technology, 5 (3) P197-P201 (2016).

6.Zhiwei Huang, Cheng Li*, Guangyang Lin, Shumei Lai, Chen Wang, Wei Huang, Jianyuan Wang, and Songyan Chen, Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contactApplied Physics Express 9, 021301 (2016).

7. Guangyang Lin, Ningli Chen, Lu Zhang, Zhiwei Huang,Wei Huang, JianyuanWang, Jianfang Xu, Songyan Chen and Cheng Li, Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate, Materials 2016, 9, 803

8. Guangyang Lin, Xiaoling Lan, Ningli Chen, Cheng Li⁎, Donglin Huang, Songyan Chen Wei Huang, Jianfang Xu, Hongkai Lai, Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation, Materials Science in Semiconductor Processing 56 (2016) 282–286.

9. Qihai Lu, RongHuang, Xiaoling Lan, Xiaowei Chi, Chao Lu, Cheng Li,Zhiguo Wu, JunLi, Genliang Han, Pengxun Yan, Amazing diffusion depth of ultra- thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition, Materials Letters 169(2016)164–167

10. Chen Wang, Cheng Li*, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai, Songyan Chen, Zengfeng Di, and Miao Zhang, “Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 9, SEPTEMBER 2014. 
 
11. Chen Wang, Cheng Li*, Shihao Huang, Weifang Lu, Guangming Yan, Maotian Zhang, Huanda Wu, Guangyang Lin, Jiangbin Wei, Wei Huang, Hongkai Lai, Songyan Chen, “Phosphorus diffusion in germanium following implantation and excimer laser annealing”, Applied Surface Science, Vol.300, pages 208-212, February 2014.
 
12.Guangyang Lin, Mengrao Tang, Cheng Li,a) Shihao Huang, Weifang Lu, Chen Wang,Guangming Yan, and Songyan Chen,Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height,APPLIED PHYSICS LETTERS 103, 253506 (2013)。
 
13. Shihao Huang,Cheng Li*,Chengzhao Chen, Chen Wang, Guangming Yan,Hongkai Lai, and Songyan Chen, In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition,APPL. PHYS. LETT. 102, 182102 (2013)
 
14.  Shihao Huang, Weifang Lu, Cheng Li,* Wei Huang, Hongkai Lai, and Songyan Chen,A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission, Vol. 21, No. 1, OPTICS EXPRESS 640,14 January 2013.

 15. Mengrao Tang, Cheng Li*,Zheng Wu, Guanzhou Liu, Wei Huang, Hongkai Lai, Songyan Chen, “A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1−xGex Epilayers on Si Substrates”, IEEE. Tran. Electron Devices, 59(9),2438-2443, (2012).

 16.  Zheng Wu, Wei Huang, Cheng Li*, Hongkai Lai, and Songyan Chen,Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness IEEE Tran.on Electron Devices. 59(9),1328, 2012. 

17.  Yuanyu Zheng, Guanzhou Liu, Cheng Li*, Wei Huang, Songyan Chen, and Hongkai Lai, Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate,J. Vac. Sci. Technol. B 30(1),011202-1-4,2012.

18.  Shihao Huang, Cheng Li*, Zhiwen Zhou, Chengzhao Chen, Yuanyu Zheng, Wei Huang,Hongkai Lai, Songyan Chen,Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template, Thin Solid Films 520 (2012) 2307–2310

19. Mengrao Tang, Wei Huang, Cheng Li*, Hongkai Lai, and Songyan Chen Thermal Stability of Nickel Germanide Formed on Tensile-Strained Ge Epilayer on Si Substrate”,IEEE Electron device letters, 31(8),863, 2010.

20.  Guanzhou Liu, Cheng Li*, Hongkai Lai, and Songyan Chen Ge Incorporation in HfO2 Dielectric Deposited on Ge Substrate during Dry/Wet Thermal Annealing,Journal of The Electrochemical Society, 157 (6) H603-H606 2010

21.  Yanghua Chen, Cheng LI*, Hongkai Lai, Songyan Chen, Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates, Nanotechnology, 211152072010 .

22.   Cheng LI*, Yanghua Chen, Zhiwen Zhou, Hongkai Lai, Songyan Chen, Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator, Appl. Phys. Lett. 95,251102 (2009).

23. Yanghua Chen, Cheng Li*, Zhiwen Zhou, Hongkai Lai, Songyan Chen,C.Ding, B.W. Cheng, Y.D. Yu, Room temperature photoluminescence of tensile-strained Ge/SiGe quantum wells grown on silicon-based germanium virtual substrate, Appl. Phys. Lett. 94, 141902(2009)

24.  Yong Zhang, Cheng LI*, Kunhuang Cai, Yanghua Chen, Songyan Chen, Hongkai Lai, Junyong Kang, Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys, Journal of Appl. Phys. 106, 063508(2009).

25. Yong Zhang, Linhong Liao, Cheng LI*, Songyan Chen, Hongkai Lai, Junyong Kang, Strain relaxation in ultrathin SGOI substrates fabricated by multistep Ge condensation method, Journal of The Electrochemical Society,  156(2),H115-H118, 2009.

26.  Yong Zhang, Linhong Liao, Cheng LI*, Songyan Chen, HOngkai Lai, J.Y. Kang, Morphological evolution of SiGe covered with and without native oxide during vacuum thermal annealing, J. of Appl. Phys. 104093526 2008.

27.   Zhiwen Zhou, Cheng LI*, Hongkai Lai, Songyan Chen, Jinzhong Yu, The influence of low-temperature Ge seed layer on Growth of high quanlity Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition, Journal of Crystal growth, 310(2008)2508.

28.  Cheng LI*, Kunhuang Cai, Y. Zhang, Hongkia Lai, Songyan Chen, Oxidation Behavior of strained SiGe layer on silicon substrate in both dry and wet ambient, Journal of The Electrochemical Society, 155(3), H156, 2008.

29.  Cheng LI*, Hongkai Lai, Songyan Chen, T. Suemasu, F. Hasegawa,Temperature dependence of electroluminescence from silicon p-I-n light-emitting diodes, J. Appl. Phys. Vol.100,023506(2006)

30.  Cheng LI, T. Suemasu and F. Hasegawa, Room-Temperature Electroluminescence of a Si-Based p-i-n Diode with Beta-FeSi(2)active region,J. Appl. Phys. Vol97, 043529,2005.

31.  Cheng LI, T. Ohtsuka, Y.Ozawa, T. Suemasu and F. Hasegawa, Influence of boron-doped Si cap layer on the photoluminescence of Beta-FeSi2 particles embedded in Si matrix, J. Appl. Phys. 94(3), 1518(2003)

 32Cheng Li, C.J.Huang, B. Cheng, Y. Zhuo, L. Luo, Jinzhong Yu, Qiming Wang, SiGe/Si resonant-cavity-enhanced photodetectors for 1.3um operation fabricated using wafer bonding techniques, J. Appl. Phys. 92(4), 1718, 2002.

33.  Cheng Li, Qinqing Yang, Hongjie Wang, Jinzhong Yu, Qiming Wang, Yongkang Li, Junming Zhou, Chenglu Lin,  " Si1-xGex/Si Resonant- Cavity-Enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3mm ", Appl. Phys. Lett., 77(2), 157,2000.

 

 
任教课程

集成电路CAD,硅基光电子器件与工艺,半导体异质结物理

历史

注册了
5 年 46 周