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林伟

个人信息

职称
工程师
Email
linwei@xmu.edu.cn
工作电话
2187537
办公室
嘉庚五212
研究领域

III族氮化物半导体材料物理与应用 

个人简历

2000/09-2004/07 厦门大学物理系,获学士学位;
2004/09-2010/12 厦门大学物理系凝聚态物理专业,获博士学位;
2009/09至今 厦门大学物理系任工程师。

在研基金

国家高技术研究发展计划(863 计划) 《高铝组分氮化物材料制备技术研究》

青年科学基金项目《深紫外AlGaN光学各向异性与自旋轨道调制研究》

发表文章
 

[1] C. Yue, Y. Yu, S. Sun, X. He, B. Chen, W. Lin, B. Xu, M. Zheng, S. Wu, J. Li, J. Kang, and L. Lin, “High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium-Ion Batteries,” Adv. Funct. Mater., 2015.

[2] C. Zhou, Y. Wu, X. Chen, W. Lin, Y. Zhou, J. Kang, and H. Zhu, “Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface,” Nano-Micro Lett., 2015.

[3] N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection,” Nanoscale, Oct. 2014.

[4] N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. T. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN) m /(GaN) n superlattices for narrowband deep-ultraviolet detection,” Nanoscale, vol. 6, pp. 14733–14739, 2014.

[5] Y. Yu, C. Yue, S. Sun, W. Lin, H. Su, B. Xu, J. Li, S. Wu, J. Li, and J. Kang, “The E ff ects of Di ff erent Core − Shell Structures on the Electrochemical Performances of Si − Ge Nanorod Arrays as Anodes for Micro-Lithium Ion Batteries,” 2014.

[6] T. Zheng, W. Lin, D. Cai, W. Yang, W. Jiang, H. Chen, J. Li, S. Li, and J. Kang, “High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions.,” Nanoscale Res. Lett., vol. 9, no. 1, p. 40, Jan. 2014.

[7] X. Zhuo, J. Ni, J. Li, W. Lin, D. Cai, S. Li, and J. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants,” J. Appl. Phys., vol. 115, no. 12, p. 124305, Mar. 2014.

[8] X. Zhuo, J. Ni, J. Li, W. Lin, D. Cai, S. Li, and J. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants,” J. Appl. Phys., vol. 115, 2014.

[9] J. Li, C. Yue, Y. Yu, Y.-S. Chui, J. Yin, Z. Wu, C. Wang, Y. Zang, W. Lin, J. Li, S. Wu, and Q. Wu, “Si/Ge core–shell nanoarrays as the anode material for 3D lithium ion batteries,” J. Mater. Chem. A, vol. 1, no. 45, p. 14344, 2013.

[10] W. Lin, W. Jiang, N. Gao, D. Cai, S. Li, and J. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN) m /(AlN) n superlattices,” Laser Photon. Rev., vol. 7, no. 4, pp. 572–579, Jul. 2013.

[11] W. Yang, J. Li, W. Lin, S. Li, H. Chen, D. Liu, X. Yang, and J. Kang, “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs,” AIP Adv., vol. 3, no. 5, p. 052103, 2013.

[12] Q. Zhuang, W. Lin, W. Yang, W. Yang, C. Huang, J. Li, H. Chen, S. Li, and J. Kang, “Defect Suppression in AlN Epilayer Using Hierarchical Growth Units,” J. Phys. Chem. C, vol. 117, no. 27, pp. 14158–14164, Jul. 2013.

[13] B. Zhang, W. Lin, S. Li, Y. Zheng, X. Yang, D. Cai, and J. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface,” J. Appl. Phys., vol. 111, no. 11, p. 113710, 2012.

[14] X. Wang, S. Chen, W. Lin, S. Li, H. Chen, D. Liu, and J. Kang, “Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy,” J. Mater. Res., vol. 26, no. 06, pp. 775–780, Mar. 2011.

[15] W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. (Amst)., vol. 32, no. 9, pp. 891–895, Jul. 2010.

[16] W. Lin, S. Li, and J. Kang, “Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy,” Appl. Phys. Lett., vol. 96, no. 10, p. 101115, 2010.

[17] S. Chen, W. Lin, S. Li, and J. Kang, “Electronic Structures of InN/GaN Quantum Dots,” J. Nanosci. Nanotechnol., vol. 9, no. 2, pp. 1226–1228, 2009.

[18] J. Li, W. Lin, W. Yang, W. Cai, Q. Pan, X. Lin, S. Li, H. Chen, D. Liu, and J. Cai, “Design and epitaxy of structural III-nitrides,” J. Cryst. Growth, vol. 311, no. 3, pp. 478–481, Jan. 2009.

[19] W. Lin, D. Benjamin, S. Li, T. Sekiguchi, S. Ito, and J. Kang, “Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells,” Cryst. Growth Des., vol. 9, no. 4, pp. 1698–1701, Apr. 2009.

[20] W. Lin, S. Li, and J. Kang, “Polarization effects on quantum levels in InN/GaN quantum wells.,” Nanotechnology, vol. 20, no. 48, p. 485204, Dec. 2009.

[21] Q. Zhuang, W. Lin, and J. Kang, “Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces,” J. Phys. Chem. C, vol. 113, no. 23, pp. 10185–10188, Jun. 2009.

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