Skip to Content

李金钗

李金钗的头像

个人信息

职称
高级工程师
Email
jinchaili@xmu.edu.cn
工作电话
0592-2187537
办公室
嘉庚四308
研究领域

III族氮化物半导体材料设计与生长、III族氮化物半导体器件制备

个人简历
1998年9月~2002年 7月  厦门大学物理系   物理与电子信息类   攻读学士学位
2002年9月~2008年12月 厦门大学物理系   凝聚态物理             攻读博士学位
2009年8月~2010年12月 台湾交通大学光电工程系                   博士后研究
2011年2月至今               厦门大学物理系                                高级工程师

 

在研基金

国家自然科学青年基金,高Al组分AlGaN应变量子结构制备与特性研究,2013-2015

发表文章
第一或者通讯作者文章:
1)   C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers”, Applied Physics Letters, 97,171106,2011.
2)   C. H. Wang, S. P. Chang, H. W. Wang, J. C. Li, W. T. Chang, Y. S. Lu, Z. Y. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”, Applied Physics Letters, 97, 181101, 2010.
3)   C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”, Applied Physics Letters, 97, 261103, 2010.
4)   S. P. Chang, C. H. Wang, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer”, Applied Physics Letters, 97, 251114, December, 2010.
5)   J. C. Li, T. C. Lu, H. M. Huang, W. W. Chan, H. C. Kuo, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer”,Journal of Applied Physics, 108, 063508, September, 2010.
6)   J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-d-codoped AlxGa1-xN/AlyGa1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, October, 2009.
7)   J. C. Li, S. P. Li, and J. Y. Kang, “Quantized level transitions and modification in InGaN/GaN multiple quantum wells”, Applied Physics Letters, 92 (10), 101929-1-101929-3, March, 2008.
8)   J. C. Li, and J. Y. Kang, “Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant”, Applied Physics Letters, 91 (15), 152106-1-152106-3, October, 2007.
9)   J. C. Li, and J. Y. Kang, “Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from the first-principles calculations”, Physical Review B, 71 (3), 035216-1-035216-4, January, 2005.
10)J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, January, 2009.
 
发明专利:
选择超晶格位置掺杂的p型III族氮化物材料的制备方法.
专利号:200810071176.0

发明人:康俊勇,李金钗,李书平,杨伟煌,陈航洋,刘达艺.

 

 

历史

注册了
6 年 1 周