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陈厦平

陈厦平的头像

个人信息

职称
高级工程师
Email
chenxp@xmu.edu.cn
工作电话
0592-2182458
办公室
科学楼209室
研究领域

半导体器件物理与制备工艺
宽带隙半导体材料与光电器件研究

个人简历

2011 - 今 厦门大学物理与机电工程学院,高级工程师
2007 - 2011 厦门大学物理与机电工程学院,工程师
2002 - 2007 厦门大学物理系,获凝聚态物理专业理学博士学位
1998 - 2002 福州大学电子系,获电子科学与技术专业工学学士学位

在研基金

福建省自然科学青年基金:PIN结构4H-SiC紫外光电二极管一维阵列的研究,在研,课题负责人
国家自然科学基金面上项目:高性能4H-SiC PIN紫外光电探测器一维阵列的研究,在研,课题骨干
国家自然科学基金面上项目:物理冶金法晶体硅太阳电池光衰减现象的研究,在研,课题参与
国家自然科学基金重大研究计划培育项目:超大规模柔性高速石墨烯射频晶体管关键技术研究,在研,课题参与

发表文章

· X. P. Chen, H. L. Zhu, R. D. Hong and Z. Y. Wu, "Fabrication and Characterization of Delta-Doped 4H-SiC Vertical PIN Photosensor", submitted.

· X. P. Chen, Z. Y. Wu and H. L. Zhu, "Effect of the intrinsic layer thickness on the spectral performance of p-i-n structure 4H-SiC ultraviolet photodetector", 2011 International Conference on Remote Sensing, Environment and Transportation Engineering, RSETE 2011 – Proceedings, 5918 (2011).

· CHEN Xia-Ping, ZHU Hui-Li, CAI Jia-Fa, "Characteristics of SiOx film grown on 4H-SiC by thermal oxidation", Chinese Journal of Quantum Electronics, 27(4), 474 (2010).

· H. L. Huang, W. F. Yang, Y. N. Xie, X. P. Chen and Z. Y. Wu, "Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on TiO2 Films Deposited by Radio-Frequency Magnetron Sputtering", IEEE ELECTRON DEVICE LETTERS, 31(6), 588 (2010).

· CHEN Xia-Ping, ZHU Hui-Li, "Research and Analysis on Absorption Coefficient of 4H-SiC at Ultraviolet Wavelength", Chinese Journal of Spectroscopy Laboratory, 27(4), 1597 (2010).

· X. P. Chen, H. L. Zhu, J. F. Cai and Z. Y. Wu, "High-performance 4H-SiC-based ultraviolet p-i-n photodetector", JOURNAL OF APPLIED PHYSICS, 102(2), 024505 (2007).

· X. P. Chen, W. F. Yang and Z. Y. Wu, "Visible blind p-i-n ultraviolet photodetector fabricated on 4H-SiC", MICROELECTRONIC ENGINEERING, 83(1), 104 (2006).

· R. D. Hong, X. P. Chen, M. K. Zhang, Z. Y. Wu and Y. Zhou, "Optimization of 4H-SiC separated-absorption-charge-multiplication (SACM) avalanche photodiode with low avalanche breakdown voltage", 2011 International Conference on Electronics and Optoelectronics, ICEOE 2011 – Proceedings, V4-265 (2011).

· L. Li, Y. W. Zhong, J. Li, J. L. Gong, Y. Ben, J. Xu, X. P. Chen and Z. Ma, "Breath figure lithography: A facile and versatile method for micropatterning", JOURNAL OF COLLOID AND INTERFACE SCIENCE, 342(1), 192 (2010).

· R. D. Hong, J. Huang, X. P. Chen, Y. Zhou, D. Y. Liu and Z. Y. Wu, "Ellipsometry, FTIR, Raman and X-Ray Spectroscopy Analysis of PECVD a-Si1-xCx:H Film", SPECTROSCOPY LETTERS, 43(4), 298 (2010).

· H. L. Zhu, X. P. Chen, J. F. Cai and Z. Y. Wu, "4H-SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain", SOLID-STATE ELECTRONICS, 53(1), 7 (2009).

· M. K. Zhang, J. Huang, R. D. Hong, X. P. Chen and Z. Y. Wu, "Annealing effects on structural, optical and electrical properties of Al implanted 4H-SiC", 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 314 (2009).

· F. Zhang, W. F. Yang, H. L. Huang, X. P. Chen, Z. Y. Wu, H. L. Zhu, H. J. Qi, J. K. Yao, Z. X. Fan and J. D. Shao, "High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3/SiO2 films", APPLIED PHYSICS LETTERS, 92(25), 251102 (2008).

· J. Huang, R. D. Hong, X. P. Chen and Z. Y. Wu, "Crystallization of amorphous hydrogenated SiC films by KrF excimer laser annealing", Acta Optica Sinica, 28(S2), 378 (2008).

 

专利情况

· 发明专利:δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法,吴正云; 陈厦平; 朱会丽; 卢嵩岳; 李凌,专利号:ZL200610135372.0

· 发明专利:一种δ掺杂4H-SiC雪崩紫外光电探测器及其制备方法,吴正云; 朱会丽; 陈厦平; 张峰,专利号:ZL200710008793.1

· 实用新型专利:4H-SiC雪崩光电探测器,吴正云; 朱会丽; 陈厦平,专利号:ZL200620156550.3

任教课程

· 主要负责半导体工艺实验室的SP-2型磁控溅射台、ICP-98A型高密度等离子体刻蚀机以及PECVD-2D型等离子体淀积台。

· 指导ICP刻蚀工艺专门化实验课程。

历史

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5 年 44 周