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张永


毕业学校、
专业及时间

20096月毕业于厦门大学物理系凝聚态物理专业

 
 

博士

现工作单位

厦门乾照光电股份有限公司
现任专业技术职务

外延制造部副经理

任职时间

200907

详细通讯地址
(E-mail地址)

厦门火炬(翔安)产业区翔岳路19

2009年7月-今:张永博士任厦门乾照光电股份有限公司外延制造部副经理和研发主管,负责高效GaAs多结太阳电池和AlGaInP四元系红黄光LED的研发和生产。

 
 
 
 
 

1. 学术论文:
[1] Yong Zhang, Cheng Li, Kunhuang Cai, Yanghua Chen, Songyan Chen, Hongkai Lai, Junyong Kang. Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys. Journal of Applied Physics, 106, 063508 (2009).
[2] Yong Zhang, Kunhuang Cai, Cheng Li, Songyan Chen, Hongkai Lai, Junyong Kang. Strain relaxation in ultra-thin SGOI substrate fabricated by multi-step Ge condensation method. Journal of The Electrochemical Society, 156, H115, (2009).
[3] Yong Zhang, Kunhuang Cai, Cheng Li, Songyan Chen, Hongkai Lai, Junyong Kang. Strain relaxation in SiGe layer during wet oxidation process. Applied Surface Science, 255, 3701 (2009).
[4] Yong Zhang, Linghong Liao, Cheng Li, Songyan Chen, Hongkai Lai, Junyong Kang. Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing. Journal of AppliedPhysics, 104, 093526 (2008).
[5] Yong Zhang, Cheng Li, Songyan Chen, Hongkai Lai, Junyong Kang. Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate. Solid-State Electronics, 52(11), 1782 (2008).
[6] 张银桥,蔡建九,张双翔,张永(通信作者),林志园,王向武,陈开建.不同缓冲层对GaAsIn0.3Ga0.7As材料特性的影响,固体电子学研究与进展, 30(3), (2010).
[7] 张永,李成,陈松岩,赖虹凯,康俊勇,成步文,王启明.Ge 组分对SiGe HBT直流特性的影响.固体电子研究与进展,28(4),479 (2008).
[8] Cheng Li, Kunhuang Cai, Yong Zhang, Hongkai Lai, Songyan Chen. Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient. Journal of The Electrochemical Society, 155(3), H156 (2008).
[9] Kunhuang Cai, Cheng Li, Yong Zhang, Jianfang Xu, Hongkai Lai, Songyan Chen. Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer. Applied Surface Science, 254, 5363 (2008).
[10] 蔡坤煌,张永,李成,赖虹凯,陈松岩.干法氧化法制备SiGe弛豫缓冲层及其表征.半导体学报,28(12), 1937 (2007).
[11] 周志文,蔡志猛,张永,蔡坤煌,周笔,林桂江,汪建元,李成,赖虹凯,陈松岩, 余金中,王启明.UHV/CVD法生长硅基低位错密度厚锗外延层.半导体学报.29(2), 315-318 (2008).
 
2. 发明专利:
[1] 基于虚衬底的硅锗异质结光晶体管(专利号:ZL 200810070524
[2] 一种锗量子点的制备方法(专利号:ZL200810071934
[3] 低位错密度锗硅虚衬底的制备方法(专利号:ZL200710008498.6